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Atomic Layer Deposition (ALD) of Vanadium Oxide Thin Films



Microbolometer grade vanadium oxide thin films were grown by Atomic Layer Deposition (ALD) method using VTIP metal organic precursor and water vapor. The ALD process was studied using in-situ QCM system integrated into the reactor. Mass uptake during each half reaction was monitored and analyzed for different half-reaction sequences. An overall mass uptake of 20 ng/cm2 was recorded for a complete ALD cycle.  Thickness analysis of the vanadium oxide films grown by 2500 cycles yielded a thickness of ~800 Å which corresponds to a 0.32 Å /cycle thin film growth rate. The ALD grown thin films were characterized and their electrical and structural properties were reported. Temperature coefficient of resistance (TCR) value was measured to be around -4.7%/K, and resistivity was found as 77kΩ.cm. In addition, the ALD grown vanadium oxide thin films are found to be oxygen reach in composition that is yielding V2O5.

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