Properties of stain etched p-type silicon in aqueous HF/Cr(NO₃)₃ solution
Abstract
This study investigated the morphology and photoluminescence (PL) characteristics of stain-etched p-type silicon using an aqueous HF–Cr(NO₃)₃–H₂O solution, focusing on how these properties change with etching time. Scanning electron microscopy (SEM) analysis revealed a sponge-like surface structure, with the layer’s thickness diminishing as etching time increased. PL measurements showed a red emission peak around 600 nm, which gradually shifted to longer wavelengths and decreased in intensity as the etching duration extended from 20 to 60 minutes. A comparable trend was also noticed with higher excitation wavelengths. Fourier-transform infrared (FTIR) spectroscopy indicated that all freshly etched samples were passivated with hydrogen and partially with oxygen. The mechanism behind the observed luminescence was explored. Additionally, the photocatalytic performance of the etched layers was tested for the degradation of rhodamine B under both ultraviolet (UV) and visible light. Results showed the highest activity under UV light, achieving 76% degradation after 3.5 hours.
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URN: https://sloi.org/urn:sl:tjoee101355
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